Influence of Doping Methods on the Gas-Sensing Properties of CuO-SnO2 Sensors

Zhi Dong Lin; Wen Long Song; Han Min Yang; Ju Cheng Zheng

doi:10.4028/www.scientific.net/AMR.306-307.1289

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 306-307Influence of Doping Methods on the Gas-Sensing...

Influence of Doping Methods on the Gas-Sensing Properties of CuO-SnO₂ Sensors

Abstract:

Nano crystalline SnO₂ was prepared by sol-gel with PEG surfactant. CuO was doped in the SnO₂ by mechanical mixture and reaction congelation from CuCl. The samples were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM) and nitrogen adsorption isotherms (BET). The results indicated that the average crystal size of SnO2 at sintering temperature of 550 °C was 10 nm, the conglomeration size of SnO₂ was about 100 nm. The specific surface area of pure SnO₂, mechanical doping SnO₂ and reaction doping SnO₂ were 110, 84, 72 m²/g, respectively. The thick film gas sensors made from these samples were examined. SnO₂ doped by different methods had different electrical and gas-sensing properties. The sensors based on CuO doped SnO₂films exhibited less sensitive to ethanol gas but extremely higher sensitivity to H₂S gas than that of pure SnO₂.

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Periodical:

Advanced Materials Research (Volumes 306-307)

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1289-1295

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.306-307.1289

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Online since:

August 2011

Authors:

Zhi Dong Lin, Wen Long Song, Han Min Yang, Ju Cheng Zheng

Keywords:

CuO-SnO₂, Doping Method, Gas-Sensing, Nanoparticle

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