Correlation of Structural and Optical Properties of nc-Ge/a-Si Multilayers Grown by Ion Beam Sputtering

Abstract:

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The nc-Ge/a-Si multilayer structures were fabricated by ion beam sputtering technique on silicon substrates at temperature of 400 °C. Raman scattering spectroscopy, atomic force microscopy (AFM) and room temperature photoluminescence were used to characterize the structure and optical property of the samples. It was found that the nc-Ge/a-Si multilayer sample can be obtained when the Ge sublayer is 3 nm. The room temperature photoluminescence was observed and the luminescent peak is located at 685 nm. Compared with the a-Ge/a-Si film, the intensity of PL of the nc-Ge/a-Si multilayer film becomes stronger due to the higher volume fraction of crystallized component.

Info:

Periodical:

Advanced Materials Research (Volumes 306-307)

Edited by:

Shiquan Liu and Min Zuo

Pages:

1300-1303

DOI:

10.4028/www.scientific.net/AMR.306-307.1300

Citation:

C. Song et al., "Correlation of Structural and Optical Properties of nc-Ge/a-Si Multilayers Grown by Ion Beam Sputtering", Advanced Materials Research, Vols. 306-307, pp. 1300-1303, 2011

Online since:

August 2011

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$35.00

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