Correlation of Structural and Optical Properties of nc-Ge/a-Si Multilayers Grown by Ion Beam Sputtering

Abstract:

The nc-Ge/a-Si multilayer structures were fabricated by ion beam sputtering technique on silicon substrates at temperature of 400 °C. Raman scattering spectroscopy, atomic force microscopy (AFM) and room temperature photoluminescence were used to characterize the structure and optical property of the samples. It was found that the nc-Ge/a-Si multilayer sample can be obtained when the Ge sublayer is 3 nm. The room temperature photoluminescence was observed and the luminescent peak is located at 685 nm. Compared with the a-Ge/a-Si film, the intensity of PL of the nc-Ge/a-Si multilayer film becomes stronger due to the higher volume fraction of crystallized component.

• Periodical: Advanced Materials Research (Volumes 306-307)
• Pages: 1300-1303
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.306-307.1300
• Online since: August 2011
• Authors: Chao Song, Rui Huang, Xiang Wang, Jie Song, Yan Qing Guo
• Keywords: Ion Beam Sputtering, Nc-Ge/a-Si Multilayer, Photoluminescence (PL)

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