Determination of Interdiffusion Coefficient in Nanolayered Structures by Auger Electron Spectroscopical Sputter Depth Profiling
A general method was developed for determination of interdiffusion coefficient in nanolayered structures by Auger electron spectroscopical (AES) sputter depth profiling. The procedures of this method are as follows: (1) the concentration depth profile of annealed sample is calculated from its as-grown layered structure by adopting a suitable diffusion model; (2) this diffusion concentration depth profile is convoluted with a resolution function provided by the mixing-roughness-information depth (MRI)-model and as a result a calculated AES depth profile is obtained; (3) the interdiffusion coefficient is determined by fitting the calculated AES depth profile to the measured one. As an example, the interdiffusion coefficient parameters, the pre-exponential factor and the activation energy, were determined as 4.7×10-18 m2/s and 0.76 eV, respectively, for a GexSi1-x/Si multilayered nanostructure with Ge-Si alloyed layers of 2.2, 4.3 and 2.2 nm thickness in Si matrix.
Shiquan Liu and Min Zuo
J. Y. Wang "Determination of Interdiffusion Coefficient in Nanolayered Structures by Auger Electron Spectroscopical Sputter Depth Profiling", Advanced Materials Research, Vols. 306-307, pp. 1354-1359, 2011