Dislocation Configurations in Single-Crystal Superalloys during High-Temperature Low-Stress Creep

Jian Xin Zhang; Hiroshi Harada

doi:10.4028/www.scientific.net/AMR.306-307.433

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Grain Refinement of AZ91D Magnesium Alloy by In Situ Al₄C₃ Particles
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Dislocation Configurations in Single-Crystal Superalloys during High-Temperature Low-Stress Creep
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Anomalous Change of the Electrical Resistivity and the Structure of Sn Melt with Temperature
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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 306-307Dislocation Configurations in Single-Crystal...

Dislocation Configurations in Single-Crystal Superalloys during High-Temperature Low-Stress Creep

Abstract:

Dislocation configurations in two single-crystal superalloys during high-temperature low-stress creep (1100°C, 137 MP) were illustrated schematically with the use of transmission electron microscope (TEM). For an alloy with a small lattice misfit, the dislocations move in the combination of climbing and gliding processes. In the primary stage, the dislocations first move by slip in the g-matrix channels. When they reach the g¢ cuboids, they move by climb along the g¢ cuboid surfaces. In the secondary creep stage, dislocation reorientation in the (001) interfacial planes happens slowly, deviating from the deposition orientation of <110> to the misfit orientation of <100>. For an alloy with a large lattice misfit, the dislocations are able to move smoothly by cross slip in the horizontal g channels. The dislocation reorientation from the deposition orientation of <110> to the misfit orientation of <100> in the (001) interfacial planes can be completed in the primary creep stage.