Properties of CdMnTe Single Crystal Used in Nuclear Radiation Detectors

Ji Jun Zhang; Lin Jun Wang; Jian Huang; Ke Tang; Zhen Wen Yuan; Yi Ben Xia

doi:10.4028/www.scientific.net/AMR.311-313.1209

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Properties of CdMnTe Single Crystal Used in Nuclear Radiation Detectors
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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 311-313Properties of CdMnTe Single Crystal Used in...

Properties of CdMnTe Single Crystal Used in Nuclear Radiation Detectors

Abstract:

The Cd_1-xMn_xTe crystal is believed to be a good candidate to compete with Cd_1-xMn_xTe in the X-ray and γ-ray detector application. In this paper, Indium (In) doped Cd_0.8Mn_0.2Te (CdMnTe) ingots were grown by the modified Vertical Bridgman method. The as-grown crystals were characterized using Near-Infrared (NIR) transmission spectrum mapping of composition, X-ray double-crystal rocking curve measurement, I-V measurement and ²⁴¹Am gamma rays radiation measurement. The Mn composition extracted from the NIR spectra at different axial and radial distances of the 30×40×2 mm³ CdMnTe wafers shown that the Mn concentration in the range of 0.19430.0008 to 0.2020.0025 mole fraction. The FWHM values of the X-ray rocking curves are of 40-80 arc sec, indicating a high crystalline perfection. The resistivity of the wafers is (2-3) ×10¹⁰Ω.cm. The CdMnTe planar detector irradiated by ²⁴¹Am source shows the energy resolution of 8.5%.