Properties of CdMnTe Single Crystal Used in Nuclear Radiation Detectors

Abstract:

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The Cd1-xMnxTe crystal is believed to be a good candidate to compete with Cd1-xMnxTe in the X-ray and γ-ray detector application. In this paper, Indium (In) doped Cd0.8Mn0.2Te (CdMnTe) ingots were grown by the modified Vertical Bridgman method. The as-grown crystals were characterized using Near-Infrared (NIR) transmission spectrum mapping of composition, X-ray double-crystal rocking curve measurement, I-V measurement and 241Am gamma rays radiation measurement. The Mn composition extracted from the NIR spectra at different axial and radial distances of the 30×40×2 mm3 CdMnTe wafers shown that the Mn concentration in the range of 0.19430.0008 to 0.2020.0025 mole fraction. The FWHM values of the X-ray rocking curves are of 40-80 arc sec, indicating a high crystalline perfection. The resistivity of the wafers is (2-3) ×1010Ω.cm. The CdMnTe planar detector irradiated by 241Am source shows the energy resolution of 8.5%.

Info:

Periodical:

Advanced Materials Research (Volumes 311-313)

Edited by:

Zhongning Guo

Pages:

1209-1212

DOI:

10.4028/www.scientific.net/AMR.311-313.1209

Citation:

J. J. Zhang et al., "Properties of CdMnTe Single Crystal Used in Nuclear Radiation Detectors", Advanced Materials Research, Vols. 311-313, pp. 1209-1212, 2011

Online since:

August 2011

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$35.00

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