Effects of Annealing Treatment and Buffer Layer on Properties of ZnMgO Films Prepared on Diamond Substrates

Ke Tang; Lin Jun Wang; Jian Huang; Ji Jun Zhang; Wei Min Shi; Yi Ben Xia

doi:10.4028/www.scientific.net/AMR.311-313.1205

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 311-313Effects of Annealing Treatment and Buffer Layer on...

Effects of Annealing Treatment and Buffer Layer on Properties of ZnMgO Films Prepared on Diamond Substrates

Abstract:

ZnMgO films were prepared at room temperature on freestanding diamond (FSD) substrates with and without ZnO buffer layers by radio-frequency (RF) reactive magnetron sputtering method. The effects of annealing treatment and ZnO buffer layers on the structural, optical, and electrical properties of the ZnMgO films were studied by X-ray diffraction (XRD), UV-visible spectrophotometer, and electrical measurements. The experimental results suggested that the annealing treatment and buffer layer were helpful to improve the crystalline quality of ZnMgO/diamond heteroepitaxial films.

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Advanced Materials Research (Volumes 311-313)

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1205-1208

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https://doi.org/10.4028/www.scientific.net/AMR.311-313.1205

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August 2011

Authors:

Ke Tang, Lin Jun Wang, Jian Huang, Ji Jun Zhang, Wei Min Shi, Yi Ben Xia

Keywords:

Diamond, Film, ZnMgO

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