Fabrication and Electrical Properties of P(VDF-TrFE)/Bi_3.5Nd_0.5Ti₃O₁₂ Bi-Layer Composite Ferroelectric Thin Films

Abstract:

The microstructure and electrical properties of P(VDF-TrFE)/Bi_3.5Nd_0.5Ti₃O₁₂ bi-layer composite ferroelectric thin films deposited on Pt/Ti/SiO₂/Si using two successive spin coatings were investigated. It shows the pores in Bi_3.5Nd_0.5Ti₃O₁₂ (BNT) films were effectively suppressed by the presence of P(VDF-TrFE) copolymer films by SEM. The ferroelectric, leakage and dielectric properties of the thin films with different thickness ratio of P(VDF-TrFE) and BNT thin films were measured. With increasing the thickness of P(VDF-TrFE), the remnant polarization, coercive electric field, leakage current density and dielectric constant of thin films were all decreased (except pure P(VDF-TrFE) thin film). Results indicate that the key electrical properties were improved effectively by a little loss of the remnant polarization, which infers potential application in the filed of ferroelectric memory.

• Periodical: Advanced Materials Research (Volume 320)
• Pages: 170-175
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.320.170
• Online since: August 2011
• Authors: Song Bo Yang, Ming Hua Tang, Guo Yang Wang, Bo Jiang, Hua Yu Xu
• Keywords: CSD, Defect, Electrical Properties, Morpholoy, P(VDF-TrFE)/BNT Bi-Layer Composite Thin Film

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