Preparation and Properties of Al-Doped ZnO Thin Films for Solar Cells

Ying Lian Wang; Yue Hui Hu; Jun Yao Ye

doi:10.4028/www.scientific.net/AMR.320.626

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 320Preparation and Properties of Al-Doped ZnO Thin...

Preparation and Properties of Al-Doped ZnO Thin Films for Solar Cells

Abstract:

Al-doped ZnO thin films were prepared by sol-gel process. Structural features and surface morphology were studied by XRD and AFM. The influence of Al-doped concentration and aging time to microstructure and electric resistivity were investigated. It was demonstrated that the best condition was Al/Zn ratios of 4.0at% and aging time of 48h.

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Periodical:

Advanced Materials Research (Volume 320)

Pages:

626-630

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.320.626

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Online since:

August 2011

Authors:

Ying Lian Wang, Yue Hui Hu, Jun Yao Ye

Keywords:

Aging Time, Al-Doped Concentration, Al-Doped ZnO Thin Films

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References

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