Influence of HfO2 Control Oxide ALD Precursor Chemistry for Nitride Memories

Nikolaos Nikolaou; Panagiotis Dimitrakis; Pascal Normand; Vassilios Ioannou-Sougleridis; Konstantinos Giannakopoulos; Konstantina Mergia; Kaupo Kukli; Jaakko Niinisto; Mikko Ritala; Markku Leskela

doi:10.4028/www.scientific.net/AMR.324.42

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 324Influence of HfO2 Control Oxide ALD Precursor...

Influence of HfO₂ Control Oxide ALD Precursor Chemistry for Nitride Memories

Abstract:

In this work we report on the structural and electrical properties of SiO₂/Si3N₄/HfO₂ memory stacks with emphasis upon the influence of Atomic Layer Deposition chemistry used for forming the HfO₂ blocking layer. Two HfO₂ precursor chemistries were employed, the tetrakis- (ethylmethylamino)hafnium (TEMAH) and the bis(methylcyclopentadienyl)methoxymethylhafnium (HfD-04). Ozone was used as the oxygen source. The structural characteristics of the stacks were examined by means of TEM and GIXRD. Comparative studies conducted with the use of platinum gated capacitors showed that the samples grown using TEMAH have an increased electron trapping ability in comparison to the HfD-04 ones. While the two structures exhibit similar Write/Erase and retention characteristics, The samples grown from TEMAH can sustain more repeated W/E cycles (> 3×10⁵ in the 10V/-11V, 10 ms regime) compared to the samples grown from HfD-04 (< 10⁴ W/E cycles). This difference in endurance characteristics is attributed mainly to the different deposition temperatures used with these two precursors and the nature of the interfacial layer they produce between the Si₃N₄ and the HfO₂ layers.

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Periodical:

Advanced Materials Research (Volume 324)

Pages:

42-45

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.324.42

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Online since:

August 2011

Authors:

Nikolaos Nikolaou, Panagiotis Dimitrakis, Pascal Normand, Vassilios Ioannou-Sougleridis, Konstantinos Giannakopoulos, Konstantina Mergia, Kaupo Kukli, Jaakko Niinisto, Mikko Ritala, Markku Leskela

Keywords:

FLASH, Hafnium Oxide, High-k Dielectrics, Non Volatile Memories, Silicon Nitride, SONOS

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