Contribution of the Luminescence Phenomena of nc-Si to the Performances of the Industrial mc-Si Solar Cells

Abstract:

In this study, we attempt the contribution of the silicon nanocrystal nc-Si luminescence phenomena to the performance of the conventional mc-Si solar cells. These nc-Si are embedded in the hydrogenated silicon nitride dielectric layers. The experimental results are obtained by different characterizations. They show that the optimum temperature is around 720°C with a good homogeneous distribution of nc-Si (3-5nm). However, to validate our results on silicon solar cells, we deposited silicon-rich silicon nitride layers on p-type (0.5ohm.cm) and diffused POCl3(40ohm/sq) substrates. Then, we performed thermal annealing at 720°C under mixture of gas (N2/H2) during one hour. The I-V measurements are carried out after the screen printing metallization and they showed 0.4% increase of the absolute efficiency.

• Periodical: Advanced Materials Research (Volume 324)
• Pages: 465-468
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.324.465
• Online since: August 2011
• Authors: Abdellatif Zerga, Kamila Benyelles
• Keywords: I-v Characterization, Photoluminescence (PL), Silicon Nanocrystal, Silicon Nitride, Solar Cell

References

[1] Ze'ev R. Abrams, Avi Niv, and Xiang Zhang "Solar energy enhancement using down-converting particles: A rigorous approach" J. Appl. Phys. 109, 114905 (2011).

DOI: 10.1063/1.3592297

[2] L.-Y. Chen, W.H. Chen and F. Chau-Nan Hong ''Visible electroluminescence from nc-Si embedded in amorphous silicon nitride matrix'' Appl. Phys. Lett. 86 (2005) 193506.

DOI: 10.1063/1.1925311

[3] N.-M. Park, C.-J. Choi, T.-Y. Seong and S.-J. Park, Phys. Rev. Lett. 86 (2001) 1355.

[4] M. Hirasawa, T. Orii and T. Seto ''Size-dependent crystallization of Si nanoparticles'' Appl. Phys. Lett. 88 (2006) 093119.

DOI: 10.1063/1.2182018