Annealing Treatment of the SnO2 Thin Film Prepared by Sol-Gel Method

Qi Xiao; Rui Wang; Lei Xu

doi:10.4028/www.scientific.net/AMR.331.194

Paper Titles

The Effects of Fiber Volume Fraction on the Experiment Modal Behavior of 30°/-60° Carbon Fiber Plain Woven Fabric / Epoxy Resin Composites
p.175

Structure and Properties Research of Multi-Antibacterial Polyamide Fibers
p.179

Thermal Comfort Properties of Knitted Fabrics Suitable for Skin Layer of Protective Clothing Worn in Extreme Hot Conditions
p.184

A New Test Method for Weft Tension in Shed on Air-Jet Looms
p.190

Annealing Treatment of the SnO₂ Thin Film Prepared by Sol-Gel Method
p.194

Weave Structures Effect on the Shear Deformation of Annular Shaped Woven Fabrics
p.198

Weaving 3D Fabric with a “中” Shaped Cross-Section
p.202

Manufacture of Composite Nanofiber Mats with Fiber Diameters Grads by Electrospinning for Filtration Use
p.206

Study on the Tensile Properties of the High-Performance Cored Rope
p.210

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 331Annealing Treatment of the SnO2 Thin Film Prepared...

Annealing Treatment of the SnO₂ Thin Film Prepared by Sol-Gel Method

Abstract:

SnO2 thin film on the glass fiber was prepared by the ethanol solvent and crystalline tin chloride based Sol-gel method, including the process of solution preparation, fiber dip-immersing, gel reaction and annealing. The sol was prepared by alcoholysis reaction of 0.9mol/l chloride- ethanol solvent under 80°C. A thin film of sol was prepared by dip-immersing process, then a post annealing process with various temperatures and time was adopted to form a stable crystallized film on the surface of the glass fiber. X-ray diffraction, scanning electron microscope (SEM) and fiber electric resistance measurement were utilized to characterize the transmittance and resistivity of the thin film With the rising of annealing temperature, the transmittance of the thin film was firstly increased and then decreased while the resistivity changed adversely. At last, an optimized annealing process with 550°C and 3h was chosen.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Advanced Materials Research (Volume 331)

Pages:

194-197

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.331.194

Citation:

Cite this paper

Online since:

September 2011

Authors:

Qi Xiao, Rui Wang, Lei Xu

Keywords:

Annealing, Chloride, Resistivity, Sol-Gel (SG), Transmittance

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] Nakada T., Kume T., Mise T., Kunioka A: Japan Journal of Applied Physics, 1998.

Google Scholar

[2] Ramanathan K., Contreras MA., Perkins CL., Asher S, Hasoon FS, Keane J, Young D, Romero M, Metzger W., Nouﬁ R.,Ward J., Duda A:Progress in Photovoltaics Research and Applications, 2003, 11: 225-230.

DOI: 10.1002/pip.494

Google Scholar

[3] Xu, L., Wang, R., Liu, Y., Dong, L. A. Chinese Physics Letters, 28.

Google Scholar

[4] Mathew X., Thompson GW., Singh VP., McClure JC., Velumani S., Mathews NR., Sebastian PJ:Solar Energy Materials and Solar Cells, 2003, 76(3): 293-303.

Google Scholar

[5] X.Lin.,W.Zheng.,Y.Lin: Journal of functional materials, 1993, 24(5): 412-415.

Google Scholar

[6] Xu, L., R. Wang., Y. Liu., et al:Chinese Science Bulletin 56(15): 1535-1538.

Google Scholar

[7] Javier F., Michael L.,Sarkis H.J. Mater:Chem., 1997, 7(8): 1421-1427.

Google Scholar

[8] Ansari SG., Gosavi SW., Gaugal SA:Materials in Electronics,1997,8: 23-27.

Google Scholar

[9] Cricenti A.,Generosi R.,Scarselli MA:J.Vac.Sci.Technol.,B, 1996, 14(2): 1527-1530.

Google Scholar

[10] Lehan P., Appl.Opt.,1996,35: 5048.

Google Scholar

[11] Q.Pan., J.Zhang., X.Dong., Z.Cheng., L.Shi:Bulletin of the Chinese Ceramic Society, 2001, 1: 6-9.

Google Scholar