Fe Nano-Films Processed by Ammonia for the Catalyzed Growth of Aligned Carbon Nanotube Arrays

Abstract:

Fe nano-films deposited on pure Si wafer by metal vapor vacuum arc (MEVVA) ion deposition system were annealed in hydrogen and then treated by ammonia at 750 °C for the catalyzed growth of aligned carbon nanotube (CNT) arrays. Influence of ammonia on the microstructures of Fe nano-films was analyzed by a field emission scanning electron microscopy (FESEM) and image analysis software. The microstructures of the post-processed Fe nano-films were found depending on the processing time of ammonia and the film thickness. Comparing the growth results of CNTs from 10 nm Fe films, we found that when the processing temperature was 750 °C, the optimum processing time of ammonia was about 10 to 12 min for 10 nm Fe films to catalyze the growth of aligned CNT arrays.

• Periodical: Advanced Materials Research (Volumes 332-334)
• Pages: 1967-1973
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.332-334.1967
• Online since: September 2011
• Authors: Yong Zhao, Xian Chen, Shuo Hou, Zai Kai Du, Guang Yang Mo, Li Guang Fang
• Keywords: Ammonia Processing, Carbon Nanotube (CN), Fe Nano-Films

References

[1] S. Iijima: Nature Vol. 354 (1991), p.56

[2] Ch. Taschner, F. Pacal, A. Leonhardt, P. Spatenka, K. Bartsch, A. Graff and R. Kaltofen: Surface & Coatings Technology Vol. 174-175 (2003), p.81

DOI: 10.1016/s0257-8972(03)00712-6

[3] W.A. de Heer, A. Chatlelaine and D. Ugarte: Science Vol. 270 (1995), p.1179

[4] J.-M. Bonard: Solid State Electron Vol. 45 (2001), p.893

[5] S.S. Fan, M.G. Chapline, N.R. Franklin, T.W. Tombler, A.M. Cassell and H.J. Dai: Science Vol. 283 (1999), p.512

[6] R.M. Liu and J.M. Ting: Mater. Chem. and Phys. Vol. 82 (2003), p.571

[7] E.G. Wang, Z.G. Guo, J. Ma, M.M. Zhou, Y.K. Pu, S. Liu, G.Y. Zhang and D.Y. Zhong: Carbon Vol. 41 (2003), p.1827

[8] J.H. Choi, T.Y. Lee, S.H. Choi, J.H. Han, J.B. Yoo, C.Y. Park, T.W. Jung, S.G. Yu, W.K. Yi, I.T. Han and J.M. Kim: Thin Solid Films Vol. 435 (2003), p.318

DOI: 10.1016/s0040-6090(03)00341-9

[9] S.Y. Chou, P.R. Krauss and P.J. Renstrom: Appl. Phys. Lett. Vol. 67(21) (1995), p.3114

[10] S.Y. Chou, P.R. Krauss and P.J. Renstrom: Science Vol. 272 (1996), p.85

[11] X.Z. Wang, Z. Hu, Q. Wu, X. Chen and Y. Chen: Thin Solid Films Vol. 390 (2001), p.130

[12] M.J. Kim, J.H. Choi, J.B. Park, S.K. Kim, J.B. Yoo and C.Y. Park: Thin Solid Films Vol. 435 (2003), p.312

[13] Yuji Fujiwara, Hitoshi Takegawa, Hideki Sato, Kohji Maeda, Yahachi Saito, Tadashi Kobayashi, and Shigeru Shiomi: J. Appl. Phys. Vol. 95 (2004), p.7118

[14] S.J. Henley, C.H.P. Poa, A.A.D.T. Adikaari, C.E. Giusca, J.D. Carey and S.R.P. Silva: Appl. Phys. Lett. Vol. 84 (2004), p.4035

[15] G.F. Wang, H.X. Zhang, X.J. Zhang, Y.G. Wu and R.H. Tian: Surface & Coatings Technology Vol. 128-129 (2000), p.470

[16] Information on http://www.mediacy.com

[17] R.T. Zheng, G.A. Cheng, Y.B. Peng, Y. Zhao, H.P. Liu and C.L. Liang: Science in China (ser. E) Vol. 47 (2004), p.616

[18] M.H. Kuang, Z.L. Wang, X.D. Bai, J.D. Guo and E.G. Wang: Appl. Phys. Lett. Vol. 76 (2000), p.1255

[19] M. Chhowalla, K.B.K. Teo, C. Ducati, N.L. Rupesinghe, G.A.J. Amaratunga, A.C. Ferrari, D. Roy, J. Robertson and W.I. Milne: J. Appl. Phys. Vol. 90 (2001), p.5308

DOI: 10.1063/1.1410322

[20] W. Arabczyk and U. Narkiewicz: Applied Surface Science Vol. 196 (2002), p.423

[21] K.B.K. Teo, S.-B. Lee, M. Chhowalla, V. Semet, V.T. Binh, O. Groening, M. Castignolles, A. Loiseau, G. Pirio, P. Legagneux, D. Pribat, D.G. Hasko, H. Ahmed, G.A.J. Amaratunga and W.I. Milne: Nanotechnology Vol. 14 (2003), p.204

DOI: 10.1088/0957-4484/14/2/321