Improved Electroluminescence from nc-Si Film Embedded in p-i-n Structure LED
Intensive electroluminescence (EL) visible to the naked eyes is observed from p–i–n structure light emitting diodes with nanocrystalline Si (nc-Si) film as the luminescent layer. It is found the luminescence intensity increases by 20 times compared with that of nc-Si film without p-i-n structure and the turn-on voltage is sharply reduced. Combined with I-V and TEM analysis, the improved EL is attributed to the enhancement of carrier injection probability of nc-Si inserted in p-i-n structure.
Z.Y. Ma et al., "Improved Electroluminescence from nc-Si Film Embedded in p-i-n Structure LED", Advanced Materials Research, Vol. 340, pp. 177-180, 2012