Improved Electroluminescence from nc-Si Film Embedded in p-i-n Structure LED

Z.Y. Ma; G.Y. Xia; X.F. Jiang; W. Li; L. Xu; K.J. Chen; D. Feng

doi:10.4028/www.scientific.net/AMR.340.177

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 340Improved Electroluminescence from nc-Si Film...

Improved Electroluminescence from nc-Si Film Embedded in p-i-n Structure LED

Abstract:

Intensive electroluminescence (EL) visible to the naked eyes is observed from p–i–n structure light emitting diodes with nanocrystalline Si (nc-Si) film as the luminescent layer. It is found the luminescence intensity increases by 20 times compared with that of nc-Si film without p-i-n structure and the turn-on voltage is sharply reduced. Combined with I-V and TEM analysis, the improved EL is attributed to the enhancement of carrier injection probability of nc-Si inserted in p-i-n structure.

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Periodical:

Advanced Materials Research (Volume 340)

Pages:

177-180

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.340.177

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Online since:

September 2011

Authors:

Z.Y. Ma, G.Y. Xia, X.F. Jiang, W. Li, L. Xu, K.J. Chen, D. Feng

Keywords:

Electroluminescence, Nc-Si, SiO

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References

[1] J. Valenta, N. Lalic and J. Linnros: Opt. Mater. Vol. 17 (2001), p.45.

Google Scholar

[2] T. Matsuda, K. Nishihara, M. Kawabe, I. Hideyuki, S. Iwatsubo, and T. Ohzone : Solid-State Electronics Vol. 48 (2004), p. (1933).

DOI: 10.1016/j.sse.2004.05.058

Google Scholar

[3] L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzó, and F. Priolo: Nature Vol. 408 (2000), p.440.

DOI: 10.1038/35044012

Google Scholar

[4] J. Ruan, P. M. Fauchet, L. Dal Negro, M. Cazzanelli, and L. Pavesi: Appl. Phys. Lett. Vol. 83 (2003), p.5479.

DOI: 10.1063/1.1637720

Google Scholar

[5] L. Dal Negro, M. Cazzanelli, N. Daldosso, Z. Gaburro, L. Pavesi, F. Priolo, D. Pacifici, G. Franzò, and F. Iacona: Physica E Vol. 6 (2003), p.297.

DOI: 10.1016/s1386-9477(02)00605-7

Google Scholar

[6] P. Photopoulos and A. G. Nassiopoulou: Appl. Phys. Lett. Vol. 77 (2000), p.1816.

Google Scholar

[7] L. Zhang, K. Chen, L. Wang, W. Li, J. Xu, X. F. Huang and K. J. Chen: J. Phys Condens. Mat. Vol. 14 (2002), p.100083.

Google Scholar

[8] Y. P. Sui, X. F. Huang, Z. Y. Ma, W. Li, F. Qiao, K. Chen and K. J. Chen: J. Phys. Condens. Matter Vol. 15 (2003), p.5793.

Google Scholar

[9] Z.Y. Ma, K. J. Chen, X. F. Huang, J. Xu, L. W, D. Zhu, J. X. Mei, F. Qiao, D. Feng Appl. Phys. Lett. Vol. 85 (2004), p.516.

Google Scholar

[10] Z.Y. Ma, K. J. Chen, X. F. Huang, J. Xu, L. W, Y.P. Sui, D. Zhu, J. X. Mei, D. eng Jour. of Appl. Phys. Vol. 95 (2004).

Google Scholar