Improved Electroluminescence from nc-Si Film Embedded in p-i-n Structure LED

Abstract:

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Intensive electroluminescence (EL) visible to the naked eyes is observed from p–i–n structure light emitting diodes with nanocrystalline Si (nc-Si) film as the luminescent layer. It is found the luminescence intensity increases by 20 times compared with that of nc-Si film without p-i-n structure and the turn-on voltage is sharply reduced. Combined with I-V and TEM analysis, the improved EL is attributed to the enhancement of carrier injection probability of nc-Si inserted in p-i-n structure.

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Periodical:

Edited by:

Honghua Tan

Pages:

177-180

DOI:

10.4028/www.scientific.net/AMR.340.177

Citation:

Z.Y. Ma et al., "Improved Electroluminescence from nc-Si Film Embedded in p-i-n Structure LED", Advanced Materials Research, Vol. 340, pp. 177-180, 2012

Online since:

September 2011

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Price:

$35.00

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