Studies on the Preparation and Properties of Sheet Ni-Doped ZnO

Abstract:

ZnO is a direct wide band-gap Ⅱ-Ⅵ semiconductor material. For decades, ZnO has gained more and more attention as a wide band semiconductor. This paper introduced a modified homogeneous precipitation method to prepare sheet Ni-doped ZnO crystal. The preparation process was studied and the mechanism of this method was discussed. The properties of the sheet Ni-doped ZnO crystal and the effects of growth parameters on the quality of sheet Ni-doped ZnO crystal were studied using XTJ30-micro image manipulation system, thermal analysis system, X-ray diffraction. etc.

• Periodical: Advanced Materials Research (Volumes 356-360)
• Pages: 435-438
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.356-360.435
• Online since: October 2011
• Authors: Ling Cao, Dai Zong An, Yan Xin Wang, Shan Shan He, Chuang Ju Dong
• Keywords: Doping, Homogeneous Precipitation Method, ZnO Crystal

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