Studies on the Preparation and Properties of Sheet Ni-Doped ZnO

Abstract:

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ZnO is a direct wide band-gap Ⅱ-Ⅵ semiconductor material. For decades, ZnO has gained more and more attention as a wide band semiconductor. This paper introduced a modified homogeneous precipitation method to prepare sheet Ni-doped ZnO crystal. The preparation process was studied and the mechanism of this method was discussed. The properties of the sheet Ni-doped ZnO crystal and the effects of growth parameters on the quality of sheet Ni-doped ZnO crystal were studied using XTJ30-micro image manipulation system, thermal analysis system, X-ray diffraction. etc.

Info:

Periodical:

Advanced Materials Research (Volumes 356-360)

Edited by:

Hexing Li, Qunjie Xu and Daquan Zhang

Pages:

435-438

DOI:

10.4028/www.scientific.net/AMR.356-360.435

Citation:

L. Cao et al., "Studies on the Preparation and Properties of Sheet Ni-Doped ZnO", Advanced Materials Research, Vols. 356-360, pp. 435-438, 2012

Online since:

October 2011

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Price:

$35.00

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