Large-Area Synthesis and Microstructural Investigations of Silicon Nanowires and Te/Bi2Te3-Si Core-Shell Structures

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Abstract:

Large-area randomly-oriented silicon nanowires (SiNWs) were synthesized using Au-coated p-type Si (100) substrates via the solid-liquid-solid (SLS) process under different growth conditions. Microstructural studies on the NWs produced showed that straight crystalline nanowires of large aspect ratios were generally obtained at a growth temperature of 1000°C along with some worm-like amorphous structures. Large-area vertically aligned silicon nanowire (SiNW) arrays on p-type (001) Si substrates were also synthesized in an aqueous solution containing AgNO3 and HF by self-selective electroless etching. Diameters of the SiNWs produced from both methods varied from 50 nm to 350 nm and their lengths generally extended from several to approximately a few tens of µm depending on the growth conditions used. Te-Si and Bi2Te3-Si core-shell structures were subsequently obtained via galvanic displacement of SiNWs in acidic HF electrolytes containing HTeO2+ and Bi3+/HTeO2+ ions. The reactions were basically a nanoelectrochemical process due to the difference in redox potentials between the materials. The modified SiNWs of core-shell structures had roughened surface morphologies and, therefore, higher surface-to-bulk ratios compared to unmodified SiNWs. They should have potential applications in sensors, photovoltaic and thermoelectric nanodevices. Microstructural studies on the SiNWs and core-shell structures produced are presented using various microscopy, diffraction and probe-based techniques for characterization.

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243-247

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October 2011

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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[1] L. Schubert, P. Werner, N. D. Zakharov, G. Gerth, F. M. Kolb, L. Long, U. Gösel, T. Y. Tan, Appl. Phys. Lett., 84 (24), p.4968.

Google Scholar

[2] R. S. Wagner and W. C. Ellis, Appl. Phys. Lett. 4 (1964), p.89.

Google Scholar

[3] J. B. Chang, J. Z. Liu, P. X. Yan, L. F. Bai, Z. J. Yan, X. M. Yuan and Q. Yang, Mater. Lett. 60 (2006), p.2125.

Google Scholar

[4] K. Q. Peng, Y. J. Yan, S. P. Gao and J. Zhu, Adv. Mater. 14 (16) (2002), p.1164.

Google Scholar

[5] T. Qiu, X. L. Wu, G. G. Siu and P. K. Chu, J. of Electronic Mater. 35 (10) (2006), p.1879.

Google Scholar