Butane Sensing Property of Si-ZnO Nanowires p-n Junction

Abstract:

The p-n junction has been formed by using p-type boron doped silicon and n-type ZnO nanowires (NWs). It was prepared by using simple vapour-transport deposition method. Gas sensing property has been examined by measuring the resistance change of the junction sample towards 1 % of butane gas at room temperature. Significant improvement of sensing behaviour was observed from the fabricated junction sample when it was compared to sample of non-p-n junction ZnO NWs. The increase in the sensitivity of the p-n junction ZnO NWs and the ability to regain the sensing power by returning back to the initial state at room temperature are useful for future sensing device with minimum power consumption. Keywords: ZnO nanowires, Si-ZnO nanowires p-n junction, room temperature sensing and butane gas

• Periodical: Advanced Materials Research (Volume 364)
• Pages: 260-265
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.364.260
• Online since: October 2011
• Authors: T.Y. Tiong, Chang Fu Dee, M.M. Salleh, Majlis B. Yeop, M. Yahaya
• Keywords: Butane Gas, Room Temperature Sensing, Si-ZnO Nanowires P-N Junction, ZnO Nanowires

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