Characterization and PL Properties of Ge-Induced Crystallization of a-Si Films Deposited by Magnetron Sputtering

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In this paper, we present the characterization of Ge-induced crystallization of amorphous Si (a-Si) films deposited by magnetron sputtering. The film structures of a-Si films were characterized by Raman spectroscopy, Atomic Force microscope (AFM), and field emission scanning electron microscope (FESEM). The result show that 60% of a-si film with a layer of 400 nm Ge buried is crystallized at growth temperature of 800 °C. The surface roughness and average surface grain size obtained by AFM is 2.39 nm and 60 nm for the crystallized film, respectively. The films growth at temperature of 500°C and 650 °C shows a PL spectrum band from 1.6 eV to 1.8 eV, and the PL peak shifts to lower energy as the growth temperature increased. As for the film grown at 800 °C, the PL spectrum is nearly extinguished. The crystallization of a-Si film induced by buried Ge might be a useful technology to develop high quality poly-Si film without annealing.

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Periodical:

Edited by:

Helen Zhang and David Jin

Pages:

99-102

DOI:

10.4028/www.scientific.net/AMR.366.99

Citation:

K. Y. Kang et al., "Characterization and PL Properties of Ge-Induced Crystallization of a-Si Films Deposited by Magnetron Sputtering", Advanced Materials Research, Vol. 366, pp. 99-102, 2012

Online since:

October 2011

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$35.00

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