Optimization of Deposition Conditions for Preparing Silica Films by RF Magnetron Sputtering

Abstract:

Currently, single factor experiments are used in most of the traditional materials preparation without considering the interaction of the various process factors. Plackett-Burman (PB) design and central composite design (CCD) were applied to optimize eight factors for the silica (SiO_x) films deposited by RF magnetron sputtering. The results show that the three key factors, RF power density, work pressure and target sample distance are significant to prepare (SiO_x) films using PB design, in which the deposition rate is regarded as the target response. By CCD design and response surface analysis, the optimal deposition conditions are 3.72W/cm², work pressure 0.7Pa, target substrate distance 6cm, and deposition rate is 3.5nm/min.

• Periodical: Advanced Materials Research (Volume 380)
• Pages: 230-233
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.380.230
• Online since: November 2011
• Authors: Zhuang Liu, Lin Zhu, Jing Lin, Zhi Hui Sun
• Keywords: Barrier, Central Composite Design, Optimization, Plackett-Burman

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