Design and Simulation of a-Si:H/nc-Si:H Tandem Solar Cells

Abstract:

A kind of amorphous/nanocrytalline Si (a-Si:H/nc-Si:H) PIN type tandem solar cell of TCO/a-SiC:H(p1)/buffer/a-Si:H(i1)/nc-Si:H(n1)/tunnel junction (TJ)/nc-Si:H(p2)/ nc-Si:H(i2)/ a-Si:H(n2)/Al was optimized with numerical method. The high conductivity, high optical transmittance and wider band-gap material was selected as window layer in the cell. The buffer layer between p1 and i1 layers and the tunnel junction were designed, respectively. The thickness and band-gap of intrinsic layers in sub-cells were adjusted separately. The simulation results indicate that absorption solar spectrum by the designed cell can be expanded towards the long wave direction. The light-induced recession of present cell was restrained while the stability was improved.

• Periodical: Advanced Materials Research (Volume 382)
• Pages: 100-105
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.382.100
• Online since: November 2011
• Authors: Feng Shan, Wen Sheng Wei
• Keywords: Bandgap, Interface State, Tandem Solar Cells, Tunnel Junction

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