A Simplified Model of Write Amplification for Solid State Drives Adopting Page-Level Address Translation Mechanism

Abstract:

Due to its advantages, such as shock resistance, low power consumption, and so on, solid state drives are considered as a next generation storage device. And write amplification is a very import system parameter for evaluating performance. To simplify the analytical model of write amplification for solid state drives adopting page-level address translation mechanism, this paper proposes a probability model. Furthermore, numerical results based on our proposed probability model are also obtained. This paper can pose as a guideline for a first-order estimation of the write amplification for parameter ranges in solid state drives taking page mapping scheme.

• Periodical: Advanced Materials Research (Volumes 383-390)
• Pages: 2156-2160
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.383-390.2156
• Online since: November 2011
• Authors: Wei Neng Wang, Zong Chao Wang, Kai Ni, Yi Zhao, Jian She Ma, Long Fa Pan
• Keywords: Garbage Collection, Page Mapping Scheme, Solid State Drives, Write Amplification

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