A Simplified Model of Write Amplification for Solid State Drives Adopting Page-Level Address Translation Mechanism
Due to its advantages, such as shock resistance, low power consumption, and so on, solid state drives are considered as a next generation storage device. And write amplification is a very import system parameter for evaluating performance. To simplify the analytical model of write amplification for solid state drives adopting page-level address translation mechanism, this paper proposes a probability model. Furthermore, numerical results based on our proposed probability model are also obtained. This paper can pose as a guideline for a first-order estimation of the write amplification for parameter ranges in solid state drives taking page mapping scheme.
W. N. Wang et al., "A Simplified Model of Write Amplification for Solid State Drives Adopting Page-Level Address Translation Mechanism", Advanced Materials Research, Vols. 383-390, pp. 2156-2160, 2012