A Simplified Model of Write Amplification for Solid State Drives Adopting Page-Level Address Translation Mechanism

Abstract:

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Due to its advantages, such as shock resistance, low power consumption, and so on, solid state drives are considered as a next generation storage device. And write amplification is a very import system parameter for evaluating performance. To simplify the analytical model of write amplification for solid state drives adopting page-level address translation mechanism, this paper proposes a probability model. Furthermore, numerical results based on our proposed probability model are also obtained. This paper can pose as a guideline for a first-order estimation of the write amplification for parameter ranges in solid state drives taking page mapping scheme.

Info:

Periodical:

Advanced Materials Research (Volumes 383-390)

Edited by:

Wu Fan

Pages:

2156-2160

DOI:

10.4028/www.scientific.net/AMR.383-390.2156

Citation:

W. N. Wang et al., "A Simplified Model of Write Amplification for Solid State Drives Adopting Page-Level Address Translation Mechanism", Advanced Materials Research, Vols. 383-390, pp. 2156-2160, 2012

Online since:

November 2011

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Price:

$35.00

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