Design and Simulation of Infrared Absorption Based on Hydrogenated Amorphous Silicon Thin Film

Abstract:

Hydrogenated amorphous silicon (a-Si:H) thin film has nowadays attracted much attention in a wide range of electronic applications as in image sensors and in solar cells because of its merits and compatibility with semiconductor technology. In this paper, the background of a-Si:H thin film technology and microbolometer technology has been described in details. According to optical admittance matrix method, the multilayer film system based on a-Si:H thin film was simulated by MatLab software, mainly for the simulation of infrared absorption layers and the simulation of microbolometer. The results show that the combination of TiN film and a-Si:H film is suitable for the design of microbolometer within the middle and far infrared wave band (8-14µm), and the infrared absorptivity of the modified microbolometer can reach over 90%.

• Periodical: Advanced Materials Research (Volumes 383-390)
• Pages: 4702-4707
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.383-390.4702
• Online since: November 2011
• Authors: Jun Wei Fu, Wei Li, Mao Yang Wu, Min He, Ya Dong Jiang
• Keywords: A-Si:H Thin Film, Infrared Absorbtion, Microbolometer, Simulation

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