Design and Simulation of Infrared Absorption Based on Hydrogenated Amorphous Silicon Thin Film

Abstract:

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Hydrogenated amorphous silicon (a-Si:H) thin film has nowadays attracted much attention in a wide range of electronic applications as in image sensors and in solar cells because of its merits and compatibility with semiconductor technology. In this paper, the background of a-Si:H thin film technology and microbolometer technology has been described in details. According to optical admittance matrix method, the multilayer film system based on a-Si:H thin film was simulated by MatLab software, mainly for the simulation of infrared absorption layers and the simulation of microbolometer. The results show that the combination of TiN film and a-Si:H film is suitable for the design of microbolometer within the middle and far infrared wave band (8-14µm), and the infrared absorptivity of the modified microbolometer can reach over 90%.

Info:

Periodical:

Advanced Materials Research (Volumes 383-390)

Edited by:

Wu Fan

Pages:

4702-4707

DOI:

10.4028/www.scientific.net/AMR.383-390.4702

Citation:

J. W. Fu et al., "Design and Simulation of Infrared Absorption Based on Hydrogenated Amorphous Silicon Thin Film", Advanced Materials Research, Vols. 383-390, pp. 4702-4707, 2012

Online since:

November 2011

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Price:

$35.00

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