High operating temperatures infrared photodetectors are needed for improving the performance of existing military and civilian infrared systems. To obtain high device performance at higher temperatures, the thermally generated noise required to be reduced. Minority-carrier extraction and exclusion techniques are the approaches for decreasing the thermal noise of infrared systems. In the present work, an InSb extraction diode was studied and simulated for operation in the MWIR region. The simulation was performed using ATLAS device simulator from SILVACO®. The energy band diagram, doping profile, electric field profile, dark current and spectral response were calculated as a function of device thickness, applied reverse voltage and operating wavelength. The simulated photodetector exhibited a zero bias resistance-area product, R0A = 1.6×〖10〗^(-3) Ω〖.cm〗^2 at 240K.