Empirical Process Model for Arsenic Diffusion in Si_1-x-yGe_xC_y Alloys

Abstract:

The thermal diffusion behavior of ion-implanted Arsenic (As) in SiGeC alloy has been investigated and modeled. This paper introduces an empirical model consisting of physics-based and process-based parameters for evaluating the effective diffusivity of Arsenic in SiGeC accurately. The different process parameters that were found to affect the diffusivity were – Germanium content (x), diffusion temperature (T) and Carbon content (y). Germanium content taken into account was 7% and 12.3% for compressive strain in the structure with a Carbon content of 0.2%. The model incorporates all the effects associated with the change in the process parameters which affect the diffusivity of As in compressively strained-Si_1-x-yGe_xC_y. The model was found to be extremely accurate in predicting the exact dependencies of As diffusivity on physics-based and process parameters. The proposed empirical process model may find suitable application in the prediction of thermal diffusion behavior of As in Si_1-x-yGe_xC_y process-flow as well as in improving the existing model in Silvaco’s TCAD suite.

• Periodical: Advanced Materials Research (Volumes 383-390)
• Pages: 6811-6816
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.383-390.6811
• Online since: November 2011
• Authors: Abhishek A. Sharma, Santosh V. Telang, Ashish S. Shrivastav, Saikalash D. Shetty, Shweta U. Shetty
• Keywords: Arsenic (As), Band-Gap Narrowing, Compressive Strain, Diffusivity, Diffusivity Enhancement, SiGe, SiGe:C

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