Influence of Body Contact on the ESD Protection Performance in 0.35μm Partially-Depleted SOI Salicided CMOS Technology

Abstract:

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Although body contact can solve the problem of floating body effect in the partially-depleted (PD) SOI technology, it still has important influence on the ESD protection performance. In order to investigate the influence of body contact on the ESD protection performance, three different structures are fabricated in 0.35μm PD SOI salicided CMOS technology, they are stick gate structure with body floating, H gate structure with body contact located outside the edge gate, and body tied source (BTS)structure with body contact placed intermittently along the source diffusion. The transmission line pulse generator(TLPG) measured results of these three different structures are compared and analyzed, both the stick gate structure with body floating and BTS structure have a better robustness level than H gate structure with body contact.

Info:

Periodical:

Advanced Materials Research (Volumes 383-390)

Edited by:

Wu Fan

Pages:

7025-7031

DOI:

10.4028/www.scientific.net/AMR.383-390.7025

Citation:

Z. F. Wang et al., "Influence of Body Contact on the ESD Protection Performance in 0.35μm Partially-Depleted SOI Salicided CMOS Technology", Advanced Materials Research, Vols. 383-390, pp. 7025-7031, 2012

Online since:

November 2011

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Price:

$35.00

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