Influence of Surface and Interface Properties on the Electrical Conductivity of Silicon Nanomembranes

Xiang Fu Zhao; Ping Han; Shelley Scott; Max G. Lagally

doi:10.4028/www.scientific.net/AMR.383-390.7220

Paper Titles

Design of Photon Counter in PCS Nano-Particle Size Analyzer
p.7198

The Performance Optimization Design of High Frequency and High Voltage Transformer of Electronic Beam Welder
p.7202

Application of Quantum-Behaved Particle Swarm Optimization in Engineering Constrained Optimization Problems
p.7208

Nanoimprint Lithography of Multistep Loading
p.7214

Influence of Surface and Interface Properties on the Electrical Conductivity of Silicon Nanomembranes
p.7220

The Design and Test of HEMP Simulator Based on Coaxial Peaking Technology
p.7227

Research on Multiple Bi-Directional DC/DC Converter in Wind Power Flow Optimization and Control System
p.7232

Based on Adams and Matlab Co-Simulation and Experimentation Research for Independent 4WD EV
p.7238

Research on Co-Evolutionary Genetic Algorithm of Long-Distance Gas Pipelines Optimal Model Economy
p.7246

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 383-390Influence of Surface and Interface Properties on...

Influence of Surface and Interface Properties on the Electrical Conductivity of Silicon Nanomembranes

Abstract:

Electrical conductivity of silicon nanomembranes (SiNMs) was measured by van der Pauw method under two surface modifications: hydrofluoric acid (HF) treatment and vacuum-hydrogenated(VH) treatment, which create hydrogen-terminated surface; and one interface modification: forming gas (5% H2 in N2) anneal, which causes hydrogen passivated interfaces. The results show that thinner SiNMs are more sensitive to the surface modifications, and HF treatment can cause larger drop of sheet resistance than that caused by VH treatment probably because of Fluorine (F). Forming gas anneal can also improve the conductivity depending on the interface trap density.

You might also be interested in these eBooks

Manufacturing Science and Technology, ICMST2011

View Preview

Info:

Periodical:

Advanced Materials Research (Volumes 383-390)

Pages:

7220-7223

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.383-390.7220

Citation:

Cite this paper

Online since:

November 2011

Authors:

Xiang Fu Zhao, Ping Han, Shelley Scott, Max G. Lagally

Keywords:

Electrical Conductivity, Forming Gas, Hydrofluoric Acid, Silicon Nanomembrane

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] S. Scott, W. Peng, A. Kiefer, H. Jiang, I. knezevic, D. Savage, M. Eriksson and M. Lagally Influence of Surface Chemical Modification on Charge Transport Properties in Ultrathin Silicon Membranes, ACS NANO , vol. 3, p.1683–1692, June (2009).

DOI: 10.1021/nn9000947

Google Scholar

[2] P. Zhang, E. Tevaarwerk, B. Park, D. Savage, G. celler, I. knezevic, P. Evans, M. Eriksson , and M. Lagally Electronic transport in nanometre-scale silicon-on-insulator membranes, Nature , vol. 439, p.703–706, Febrary (2006).

DOI: 10.1038/nature04501

Google Scholar

[3] P. Zhang, E. Nordberg, B. Park, G. celler, I. knezevic, P. Evans, M. Eriksson , and M. Lagally, Electrical conductivity in silicon nanomembranes, New Journal of Physics , vol. 8, p.200–205, September (2006).

DOI: 10.1088/1367-2630/8/9/200

Google Scholar

[4] Y. Cui, Q. Wei, H. Park, and C. Lieber, Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species, Science, vol. 293, p.1289–1292, January (2009).

DOI: 10.1126/science.1062711

Google Scholar

[5] H. Yuan, J. Shin, G. Qin, L. Sun, P. Bhattacharya, M. Lagally, G. Celler, and Z. Ma, Flexible Photodetectors on Plastic Substrates by use of Printing Transferred Single-Crystal Germanium Membranes, Appl. Phys. vol. 94, p.033112–033115, January (2009).

DOI: 10.1063/1.3062938

Google Scholar

[6] G. Hamaide, F. Allibert, and S. Cristoloveanu, Impact of surface and buried interface passivation on ultrathin SOI electrical properties, IEEE, p.145–146, October (2008).

DOI: 10.1109/soi.2008.4656336

Google Scholar

[7] L. Pauw, A method of measuring specific resistvity and hall effect of discs of arbitrary shape, Philips Res. Repts. vol. 13, p.1–9 Febrary (1958).

Google Scholar