Influence of Surface and Interface Properties on the Electrical Conductivity of Silicon Nanomembranes
Electrical conductivity of silicon nanomembranes (SiNMs) was measured by van der Pauw method under two surface modifications: hydrofluoric acid (HF) treatment and vacuum-hydrogenated(VH) treatment, which create hydrogen-terminated surface; and one interface modification: forming gas (5% H2 in N2) anneal, which causes hydrogen passivated interfaces. The results show that thinner SiNMs are more sensitive to the surface modifications, and HF treatment can cause larger drop of sheet resistance than that caused by VH treatment probably because of Fluorine (F). Forming gas anneal can also improve the conductivity depending on the interface trap density.
X. F. Zhao et al., "Influence of Surface and Interface Properties on the Electrical Conductivity of Silicon Nanomembranes", Advanced Materials Research, Vols. 383-390, pp. 7220-7223, 2012