Influence of Surface and Interface Properties on the Electrical Conductivity of Silicon Nanomembranes

Abstract:

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Electrical conductivity of silicon nanomembranes (SiNMs) was measured by van der Pauw method under two surface modifications: hydrofluoric acid (HF) treatment and vacuum-hydrogenated(VH) treatment, which create hydrogen-terminated surface; and one interface modification: forming gas (5% H2 in N2) anneal, which causes hydrogen passivated interfaces. The results show that thinner SiNMs are more sensitive to the surface modifications, and HF treatment can cause larger drop of sheet resistance than that caused by VH treatment probably because of Fluorine (F). Forming gas anneal can also improve the conductivity depending on the interface trap density.

Info:

Periodical:

Advanced Materials Research (Volumes 383-390)

Edited by:

Wu Fan

Pages:

7220-7223

DOI:

10.4028/www.scientific.net/AMR.383-390.7220

Citation:

X. F. Zhao et al., "Influence of Surface and Interface Properties on the Electrical Conductivity of Silicon Nanomembranes", Advanced Materials Research, Vols. 383-390, pp. 7220-7223, 2012

Online since:

November 2011

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Price:

$35.00

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