In this paper, a method of multistep imprint lithography process is described. Through comparing among the loading process factors, a multistep loading locus, which includes a pre-cure release of the pressing force, is proposed for the high-conformity transfer of nano-patterns from the template to the wafer. A series of imprint experiments show that the new multistep loading process can meet the needs for different pressing areas, feature sizes and repetitious imprints. This loading process can effectively reduce the residual resist thickness while maintaining a uniform residual resist and non-distorted transfer of nano-patterns to the resist-coated wafer. And a high-conformity of 100 nm feature can be achieved.