Composition Analysis of Ge Graded Si1-xGex Alloy Films by Capacitance-Voltage Method

Y. Yang; F. Yu; Ping Han; R.P. Ge; L. Yu

doi:10.4028/www.scientific.net/AMR.383-390.7613

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 383-390Composition Analysis of Ge Graded Si1-xGex Alloy...

Composition Analysis of Ge Graded Si_1-xGe_x Alloy Films by Capacitance-Voltage Method

Abstract:

Capacitance-voltage method was used to analyze composition of the Si_1-xGe_x alloy films with a stochiometry gradient of Ge, which were epitaxially grown on Si (100) substrate by chemical vapor deposition. Using the capacitance characteristics of Si_1-xGe_x/Si obtained by applying a reserve bias to the Hg electrode probe, the contact barrier height for Hg/Si_1-xGe_xjunction and Si_1-xGe_x/Si junction, and band gap of SSi_1-xGe_x were estimated respectively. With the band gap of Si_1-xGe_x, composition of Si_1-xGe_x in Hg/Si_1-xGe_x junction and Si_1-xGe_x/Si junction were further obtained. Because analyzed Si_1-xGe_x was formed through bilateral inter-diffusion of Si into the epilayer and Ge into the substrate during the deposition, Ge distribution from surface to substrate in Si_1-xGe_x alloy films can be figured out by fitting to diffusion exponential function. The Ge distribution acquired this way was in accordance with the depth profile by auger electron spectrum.

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Periodical:

Advanced Materials Research (Volumes 383-390)

Pages:

7613-7618

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.383-390.7613

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Online since:

November 2011

Authors:

Y. Yang, F. Yu, Ping Han, R.P. Ge, L. Yu

Keywords:

C-V Method, CVD, Ge Distribution

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