Composition Analysis of Ge/Si1-xGex: C Buffer on Silicon Measured by Planar Scanning Energy Dispersive Spectroscopy

Abstract:

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In this work, Si, Ge element composition distribution in Ge /Si1-xGex:C /Si substrate structure has been characterized and modified by planar scanning energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD). The Ge /Si1-xGex:C /Si substrate samples are grown by chemical vapor deposition (CVD) method. The accuracy of EDS value can be improved by ~ 32%. And the modified EDS results indicate the Ge distribution in the Ge/Si1-xGex:C/Si sub structure.

Info:

Periodical:

Advanced Materials Research (Volumes 383-390)

Edited by:

Wu Fan

Pages:

7619-7623

DOI:

10.4028/www.scientific.net/AMR.383-390.7619

Citation:

Z. Z. Lu et al., "Composition Analysis of Ge/Si1-xGex: C Buffer on Silicon Measured by Planar Scanning Energy Dispersive Spectroscopy", Advanced Materials Research, Vols. 383-390, pp. 7619-7623, 2012

Online since:

November 2011

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$35.00

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