Composition Analysis of Ge/Si1-xGex: C Buffer on Silicon Measured by Planar Scanning Energy Dispersive Spectroscopy

Z Z Lu; F. Yu; L. Yu; L. H. Cheng; P. Han

doi:10.4028/www.scientific.net/AMR.383-390.7619

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 383-390Composition Analysis of Ge/Si1-xGex: C Buffer on...

Composition Analysis of Ge/Si_1-xGe_x: C Buffer on Silicon Measured by Planar Scanning Energy Dispersive Spectroscopy

Abstract:

In this work, Si, Ge element composition distribution in Ge /Si_1-xGe_x:C /Si substrate structure has been characterized and modified by planar scanning energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD). The Ge /Si_1-xGe_x:C /Si substrate samples are grown by chemical vapor deposition (CVD) method. The accuracy of EDS value can be improved by ~ 32%. And the modified EDS results indicate the Ge distribution in the Ge/Si_1-xGe_x:C/Si sub structure.

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Periodical:

Advanced Materials Research (Volumes 383-390)

Pages:

7619-7623

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.383-390.7619

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Online since:

November 2011

Authors:

Z Z Lu, F. Yu, L. Yu, L. H. Cheng, P. Han

Keywords:

CVD, EDS, Si_1-xGe_x

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References

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