The Study on the Defect States and Persistent Luminescent Mechanism of MgSiO3: Mn2+, Dy3+ Phosphor

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Abstract:

In order to clarify the role of Dy3+ on persistent luminescence properties of MgSiO3:Mn2+, Dy3+ and explain the persistent luminescent mechanism, the positron annihilation technique was used to study the defect states of MgSiO3:Mn2+, Dy3+. It was revealed that the structure of deeper traps were not normally respected Mg2+ vacancies and oxygen vacancies but the associated defect V"Mg-2Dy•Mg which emerged by Dy3+ doping in MgSiO3:Mn2+. This associated defect V"Mg-2Dy•Mg resulted in the excellent persistent luminescence in MgSiO3:Mn2+, Dy3+ phosphor and a possible persistent luminescent mechanism for MgSiO3:Mn2+, Dy3+ was given.

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Advanced Materials Research (Volumes 391-392)

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1041-1046

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December 2011

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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