Multiwalled Carbon Nanotube Growth Mechanism on Conductive and Non-Conductive Barriers

Aun Shih Teh; Daniel C.S. Bien; Rahimah Mohd Saman; Soo Kien Chen; Kai Sin Tan; Hing Wah Lee

doi:10.4028/www.scientific.net/AMR.403-408.1201

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Simulation of Spherical Nanoindentation of Nanocomposites Using FEM
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Novel Plastic Modelling of Micro and Nanostructure Materials
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Multiwalled Carbon Nanotube Growth Mechanism on Conductive and Non-Conductive Barriers
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Study of Heating Effect on Specific Surface Area, and Changing Optical Properties of ZnO Nanocrystals
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IP Flow Data Correlation with Inference Rules
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A Beamformer Employing Pseudo-Interference Technique for Digital Communication Systems
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An ASIC Design of a High-Speed Clock and Data Recovery Circuit
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Multiwalled Carbon Nanotube Growth Mechanism on Conductive and Non-Conductive Barriers

Abstract:

We report on the catalytic growth of multiwalled carbon nanotubes by plasma enhanced chemical vapor deposition using Ni and Co catalyst deposited on SiO₂, Si₃N ₄,ITO and TiN _Xbarrier layers; layers which are typically used as diffusive barriers of the catalyst material. Results revealed higher growth rates on conductive ITO and TiN _Xas compared to non con-ductiveSiO₂, and Si₃N ₄,barriers. Micrograph images reveal the growth mechanism for nanotubes grown on SiO₂, Si₃N _{4 and ITO to be tip growth while base growth was observed for the TiN _X barrier layer. Initial conclusion suggests that conductive diffusion barrier surfaces promotes growth rates however it is possible that multiwalled carbon nanotubes grown onSiO₂, and Si₃N ₄,were encumbered as a result of the formation of silicide as shown in the results here.}