Analyses of TID Induced Back Channel Threshold Voltage Shift of NMOS/SOI

Wei He; Zheng Xuan Zhang

doi:10.4028/www.scientific.net/AMR.403-408.2243

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 403-408Analyses of TID Induced Back Channel Threshold...

Analyses of TID Induced Back Channel Threshold Voltage Shift of NMOS/SOI

Abstract:

A new approach to model the total ionizing dose (TID) induced back channel threshold voltage shift in SOI NMOS transistors was presented. Using a 2D finite element simulation, the trapped charge density in the buried oxide of SOI NMOS resulting from irradiating was analyzed. The model derives from the Radiation-Induced parasitic MOSFET created at the back of the buried oxide . A comparison of the theoretical and experimental results have been obtained for different radiation doses.The agreement between experimental and simulated curves is excellent.

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Periodical:

Advanced Materials Research (Volumes 403-408)

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2243-2246

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.403-408.2243

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Online since:

November 2011

Authors:

Wei He, Zheng Xuan Zhang

Keywords:

Back Channel, SOI, Threshold Voltage Shift, TID

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