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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 413Finite Element Simulation Model for High...

Finite Element Simulation Model for High Temperature 4H-SiC Devices

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Abstract:

In the last decade, or so, many prototype Silicon Carbide devices and circuits have been demonstrated which have surpassed the performance of Silicon for the ability to function in extreme environments. However, the commercialisation of SiC technology now demands high performance and energy efficient miniaturised devices and circuits which can operate on the limited power resources available in harsh and hot hostile environments. This leads to refining, experimenting and perhaps re-designing devices which can rightly claim their share in the current Si dominant market. Consequently, there is a need for accurate simulation models for device engineers to understand device behaviour, examine performance trade-offs and verify the manufacturability of the design. This paper reports the first comprehensive study on the development and validation of high temperature 4H-SiC Technology Computer Aided Design (TCAD) Finite Element simulation model for low power applications. The model is based on 4H-SiC physical and material properties and is validated by high temperature 4H-SiC lateral JFET data, fabricated and characterised by our group at Newcastle University.

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Materials Science and Engineering Application II

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Periodical:

Advanced Materials Research (Volume 413)

Pages:

229-234

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.413.229

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Online since:

December 2011

Authors:

Hassan Habib, Nicolas G. Wright, Alton B. Horsfall

Keywords:

Finite Element, High-Temperature, Junction Field Effect Transistor (JFET), Low-Power Applications, Silicon Carbide (SiC), TCAD

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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