Improvement of the Properties of CuInS₂ Thin Film Prepared in Sulfate System

Abstract:

For the purpose of improving the reproducibility and the semiconductor properties of chalcopyrite CuInS₂ thin film, potassium hydrogen phthalate (C₈H₅KO₄), as a complex agent, was added into the sulphate bath system. The optimum process parameter for the preparation of CuInS₂ thin film was determined by orthogonal experiment method. The effect of C₈H₅KO₄ on the composition and Mott–Schottky behavior of the as-deposited film was studied with electron dispersion spectroscopy (EDS) and alternating current (AC) measurement. It was found that the as-deposited film was p-type semiconductor with the flatband of 0.665 V and the acceptor density of 3.06×10¹⁹ cm^-3; the addition of C₈H₅KO₄ can effectively enhance the composition stability of the film and decrease its flatband potential and acceptor density.

• Periodical: Advanced Materials Research (Volumes 415-417)
• Pages: 1611-1614
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.415-417.1611
• Online since: December 2011
• Authors: Lin Lu, Xiao Gang Li
• Keywords: Complexation, CuInS₂ Thin Film, Mott-Schottky, Solar Cell

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