GaN-Based LEDs on Nano-Patterned Sapphire Substrates

Abstract:

We have successfully fabricated light emitting diodes (LEDs) based on patterned sapphire substrates (PSSs) fabricated by employing nanoimprint lithography (NIL) technique. The nano-patterns were designed as regular triangles consisting of columns, whose diameters and pitches were 100, 150, 200, 250 nm and 200, 300, 400, 500 nm, respectively. 412 nm wavelength LEDs grown by metal organic chemical vapor deposition (MOCVD) method were also demonstrated. The NIL technique and nano-etching by employing RIE were demonstrated in details. The qualities of all LEDs based on PSSs are superior compared with that non-patterned sapphire substrate LED. The experimental results showed that the light output power was increased by using the PSS structure. At a driving current of 20 mA, the light output powers of LEDs based on PSSs with 200, 300, 400 and 500 nm pitches are enhanced by 59%, 79%, 42% and 48%, compared with the conventional LEDs. These results provide promising potential to increase output powers of commercial light-emitting devices.

• Periodical: Advanced Materials Research (Volumes 415-417)
• Pages: 656-659
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.415-417.656
• Online since: December 2011
• Authors: Jing Zhang, Shiro Sakai
• Keywords: Gallium Nitride (GaN), LED, MOCVD, Nanoimprint Lithography, Nanostructure

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