Surface Morphology and Infrared Absorption of Silicon Irradiated by Picosecond Laser Pulses in SF₆

Abstract:

The microstructured samples were prepared by irradiating silicon surface with picosecond laser pulses in SF6. The surface morphology of microstructured samples irradiated at different laser fluence was characterized by SEM. The samples exhibited high optical absorptance over a wide wavelength range between 300 and 2700 nm. The absorptance of samples irradiated with the fluence of 1.0 J/cm² was measured to be up to 95% between 1100 and 2700 nm. The infared absorptance of the surface-structured samples increased with increasing fluence. Whereas, as the annealing temperature was increased, the infared absorptance of the samples irradiated at the same fluence decreased. A tentative explanation for the effects of laser fluence and annealing temperature on the infared absorptance has been proposed based on the formation of mid-band gap impurity bands and the multiple reflections of light between microstructures.

• Periodical: Advanced Materials Research (Volumes 418-420)
• Pages: 77-81
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.418-420.77
• Online since: December 2011
• Authors: De Wei Liu, Yong Guang Huang, Xiao Ning Zhu, Xi Yuan Wang, Hai Juan Yu, Xue Chun Lin, Ming Hua Chen, Hong Liang Zhu
• Keywords: Infrared Absorptance, Microstructured Silicon, Picosecond Laser, Surface Morphology

References

[1] T-H. Her, R. J. Finlay, C. Wu, S. Deliwala, and E. Mazur: Appl. Phys. Lett. Vol. 73 (1998), p.1673

[2] R. Younkin, J. E. Carey, E. Mazur, J. A. Levinson, C. M. Friend: J. Appl. Phys. Vol. 73, (2003), p.2626

[3] T.-H. Her, R.J. Finlay, C.Wu, E. Mazur: Appl. Phys. A Vol. 70, (2000), p.383

[4] Michael A. Sheehy, Brian R. Tull, Cynthia M. Friend, Eric Mazur: Materials Science and Engineering B Vol. 137, (2007), p.289

[5] James E. Carey, Catherine H. Crouch, Mengyan Shen, and Eric Mazur: Optics Letters, Vol. 30, (2005), p.1773

[6] Brian R. Tull, Mark T. Winkler, Eric Mazur: Appl. Phys. A Vol. 96, (2009), p.327

[7] A. J. Pedraza, J. D. Fowlkes, and D. H. Lowndes: Appl. Phys. Lett. Vol. 74, (1999), p.2322

[8] Y. Liu, S. Liu, Y. Wang, G. Feng, J. Zhu, and L. Zhao: Laser Physics, Vol. 18, (2008), p.1148.

[9] C.H. CROUCH, J. E. CAREY, M. SHEN, E. MAZUR, F. Y. GÉNIN: Appl. Phys. A Vol. 79, (2004), p.1635

[10] C. Wu, C.H. Crouch, L. Zhao, J.E. Carey, R. Younkin, J.A. Levinson, E. Mazur, R.M. Farrell, P. Gothoskar, A. Karger: Appl. Phys. Lett. Vol. 78, (2001), p.1850

DOI: 10.1063/1.1358846

[11] B Gaković, M Trtica, D Batani, T Desai, P Panjan and D Vasiljević-Radović: J. Opt. A: Pure Appl. Opt. Vol. 9, (2007), p.76

DOI: 10.1088/1464-4258/9/6/s11

[12] ZHAO Ming, YIN Gang, ZHU Jing-Tao, ZHAO Li: CHIN. PHYS. LETT. Vol. 20, (2003), p.1789

[13] T. J. Chuang: J. Chem. Phys. Vol. 74, (1981), p.1453

[14] V. Zorba, N. Boukos, I. Zergioti, and C. Fotakis: APPLIED OPTICS Vol. 47, (2008), p.1846

[15] E. S. Kolesar, Jr., V. M. Bright, and D. M. Sowders: Thin Sold Films Vol. 290–291, (1996), p.23

[16] Janzen E, Stedman R, Grossmann G, Grimmeiss HG: Phys Rev. B Vol. 29, (1984), p. (1907)

[17] Pajot B, Clerjaud B, McCluskey MD: Phys. Rev. B Vol. 69, (2004), p.085210

[18] T. G. Kim, Jeffrey M. Warrender, Michael J. Aziz: Appl. Phys. Lett. Vol. 88, (2006), p.241902