Growth of Cu₂ZnSnS₄ Thin Films by Sulfurization of Co-Sputtered Metallic Precursors

Abstract:

CZTS thin films are fabricated by sulfurizing co-sputtered metallic precursor CuZnSn layers under H2S atmosphere. The precursor layers are Cu-poor, Zn-rich deposited and the fabricated films are about 2 µm in thickness. A closed-tube process is preferred with regard to its producing large closely pack grains with smooth surface. XRD and Raman confirm the CZTS structure and the impurities on the surface are removed after suitable chemistry treatments. The band gap of the CZTS is determined to be 1.48 eV by extrapolation. Some more CZTS films are product with slightly changed parameters, sulfurization time, temperature and concentration of H₂S, respectively. It is supposed that beside sulfurization time, the temperature could be more significant than concentration of H₂S in the closed system.

• Periodical: Advanced Materials Research (Volumes 418-420)
• Pages: 67-71
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.418-420.67
• Online since: December 2011
• Authors: Xin Yi Li, Da Chen Wang, Qin Yang Du, Wei Feng Liu, Guo Shun Jiang, Chang Fei Zhu
• Keywords: Co-Sputtering, CZTS, Hydrogen Sulfide

References

[1] N. G. Dhere, "Toward GW/year of CIGS production within the next decade," Solar Energy Materials and Solar Cells, vol. 91, pp.1376-1382, Sep 2007.

DOI: 10.1016/j.solmat.2007.04.003

[2] K. Jimbo, et al., "Cu2ZnSnS4-type thin film solar cells using abundant materials," Thin Solid Films, vol. 515, pp.5997-5999, May 31 2007.

DOI: 10.1016/j.tsf.2006.12.103

[3] Y. B. K. Kumar, et al., "Effect of copper salt and thiourea concentrations on the formation of Cu2ZnSnS4 thin films by spray pyrolysis," Physica Status Solidi a-Applications and Materials Science, vol. 207, pp.149-156, Jan 2010.

DOI: 10.1002/pssa.200925194

[4] C. P. Chan, et al., "Preparation of Cu2ZnSnS4 films by electrodeposition using ionic liquids," Solar Energy Materials and Solar Cells, vol. 94, pp.207-211, Feb 2010.

DOI: 10.1016/j.solmat.2009.09.003

[5] B. A. Schubert, et al., "Cu2ZnSnS4 thin film solar cells by fast coevaporation," Progress in Photovoltaics, vol. 19, pp.93-96, Jan 2011.

[6] K. Moriya, et al., "Cu2ZnSnS4 thin films annealed in H2S atmosphere for solar cell absorber prepared by pulsed laser deposition," Japanese Journal of Applied Physics, vol. 47, pp.602-604, Jan 2008.

DOI: 10.1143/jjap.47.602

[7] H. Katagiri, et al., "Development of thin film solar cell based on Cu2ZnSnS4 thin films," Solar Energy Materials and Solar Cells, vol. 65, pp.141-148, Jan 2001.

DOI: 10.1016/s0927-0248(00)00088-x

[8] T. K. Todorov, et al., "High-Efficiency Solar Cell with Earth-Abundant Liquid-Processed Absorber," Advanced Materials, vol. 22, pp. E156-+, May 2010.

DOI: 10.1002/adma.200904155

[9] G. Zoppi, et al., "Cu2ZnSnSe4 in Film Solar Cells Produced by Selenisation of Magnetron Sputtered Precursors," Progress in Photovoltaics, vol. 17, pp.315-319, Aug 2009.

DOI: 10.1002/pip.886

[10] W. H. Zhou, et al., "Sphere-like kesterite Cu2ZnSnS4 nanoparticles synthesized by a facile solvothermal method," Materials Letters, vol. 65, pp.1535-1537, Jun 15 2011.

DOI: 10.1016/j.matlet.2011.03.013

[11] P. A. Fernandes, et al., "Growth and Raman scattering characterization of Cu2ZnSnS4 thin films," Thin Solid Films, vol. 517, pp.2519-2523, Feb 2 2009.

DOI: 10.1016/j.tsf.2008.11.031

[12] P. A. Fernandes, et al., "Study of polycrystalline Cu2ZnSnS4 films by Raman scattering," Journal of Alloys and Compounds, vol. 509, pp.7600-7606, Jul 2011.

DOI: 10.1016/j.jallcom.2011.04.097

[13] K. Maeda, et al., "Influence of H2S concentration on the properties of Cu2ZnSnS4 thin films and solar cells prepared by sol-gel sulfurization," Solar Energy Materials and Solar Cells, vol. 95, pp.2855-2860, Oct 2011.

DOI: 10.1016/j.solmat.2011.05.050