Characterization of Photoelectric Properties of ZnO by I-V Measurement

Abstract:

Experiments with ZnO Metal-Oxide-Semiconductor （MOS） under different circumstances were made to get four different I-V curves. There were four conditions: dark, and tests with the green, blue, ultraviolet LED light. According to references, three parameters B，V_B0 and N_barr could be acquired by fitting lines of the I-V curves using MATLAB and LabVIEW. From their definitions, B, V_B0 and N_barr indicate photoelectric properties of ZnO cooperatively under concrete conditions. V_B0, grain boundary potential, is parameter of extrinsic properties of ZnO determined by both ZnO and testing conditions. So V_B0 is critical to control the photoelectric properties of ZnO. A smaller V_B0, the stronger the photoelectric response of ZnO and the lager the efficiency of photoelectric conversion. Besides, this theory can be expanded to test the photoelectric properties of the other semiconductor materials. And I-V curves can direct the application of these materials efficiently.

• Periodical: Advanced Materials Research (Volume 428)
• Pages: 153-158
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.428.153
• Online since: January 2012
• Authors: Meng Meng Miao
• Keywords: I-V Curves, LabVIEW, MATLAB, Photoelectric Property, Zinc Oxide (ZnO)

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