Estimating the Threading Dislocation Density of Thick GaN Films

Ru Wang; Jun Ling Zhang; Rui Xia Yang; Xiu Jun Zhang

doi:10.4028/www.scientific.net/AMR.433-440.606

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 433-440Estimating the Threading Dislocation Density of...

Estimating the Threading Dislocation Density of Thick GaN Films

Abstract:

The threading dislocation density (TDD) of thick G_aN films grown by hydride vapor phase epitaxy (HVPE) was estimated through counting etch pit density (EPD) and calculating full width at half maximum（FWHM）of double crystal X-Ray diffraction (DCXRD). TDD was about 108 through counting EPD, while it was about 109 through calculating the FWHMs of (0002) and (10¹2). The experiment results show that the two methods are both suited to estimating the TDD of the thick HVPE-G_aN films with 350um thickness. But they have some difference: EPD method is fitter in evaluating the dislocation density of the surface of thick GaN film, but FWHM method can gain the total dislocation density of thick G_aN film. The method calculating the FWHMs possesses more general statistical significance.

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Periodical:

Advanced Materials Research (Volumes 433-440)

Pages:

606-609

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.433-440.606

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Online since:

January 2012

Authors:

Ru Wang, Jun Ling Zhang, Rui Xia Yang, Xiu Jun Zhang

Keywords:

Dislocation Density, EPD, Full Width Half Maximum (FWHM), GaN

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