Improving Forward Current Characteristics of Diode by X-Ray Irradiation

Surasak Niemcharoen; Itsara Srithanachai; Surada Ueamanapong; Amporn Poyai

doi:10.4028/www.scientific.net/AMR.433-440.6713

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 433-440Improving Forward Current Characteristics of Diode...

Improving Forward Current Characteristics of Diode by X-Ray Irradiation

Abstract:

These papers investigates the effect of X-ray on forward current characteristics of diode. The forward current of diode after X-ray irradiation energy 40 keV at the exposure time ranging 5, 10 second was increased, while 15 and 20 second was decreased. X-ray causes changing of the electrical characteristics of diode. Series resistance is the main factor for analyze on forward current characteristics. From the results, X-ray can improve performance of diode at the exposure time for 5 and 10 second.

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Periodical:

Advanced Materials Research (Volumes 433-440)

Pages:

6713-6716

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.433-440.6713

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Online since:

January 2012

Authors:

Surasak Niemcharoen, Itsara Srithanachai, Surada Ueamanapong, Amporn Poyai

Keywords:

Forward Current, Series Resistance, X-Ray Irradiation

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