Removal Characteristics of Hillock Defects on Silicon Substrate by Chemical Uniformity Etching Enhanced Polishing Slurry

Abstract:

The thermally generated defects will lower the life time in bulk silicon and cause increasing in the leakage current of individual diodes in integrated circuits, that will finally cause the malfunction with advanced devices and IC chips. The removal characteristics of hillock defects on the single bare silicon wafer generated by the thermal process were experimentally analysed with respect to the chemical additives enhanced uniform chemical etching and mechanical abrasion of high pure nano sphere colloidal silica interplaying with the alkali based polishing slurry. During the polishing, it was found that the silicon surface contacted with high speed of rotated polishing pad under the down force pressure is chemically dissolved by the slurry containing FA/O organic polyamine(R(NH2)n) agent with adding proper proportional FA/O I non ions surfactant, which effectively lowered the surface strain of slurry contacted to the reactive surface of the wafer and slurry enhanced uniform chemical etch leading to the hillock region and no hillock region. However, by the process of chemical mechanical polishing，the results show it can eliminate the hillock defects on the surface of silicon wafer thoroughly with high removal rate, and achieve lower surface roughness than before process of polishing.

• Periodical: Advanced Materials Research (Volumes 452-453)
• Pages: 219-222
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.452-453.219
• Online since: January 2012
• Authors: Ming Sun, Juan Wang, Ru Wang, Yu Ling Liu, Li Bing Yang, Na Na Lin, Ying Zi Li
• Keywords: Hillock, Microroughness, Removal Rate, Surface Defect

References

[1] R C Newman. Defects in silicon, Rep. Prog. Phys., Vol. 45, 1982, pp.1165-1206.

[2] Y.G. Wang, L.C. Zhang, A. Biddut. Chemi- cal effect on the material removal rate in the CMP of silicon wafers. Wear, 2011, 270: 312–316.

DOI: 10.1016/j.wear.2010.11.006

[3] Koji Sumino. Defect reaction and its application to silicon materials technology[J]. Materials Science and Engineering B72 (2000) 67–72.

DOI: 10.1016/s0921-5107(99)00495-x

[4] Xiaolan Song, Haiping Yang1, Xunda Shi. Electrochemical behaviors of silicon wafers in silica slurry. Journal of University of Science and Technology Beijing, 2008 15 (8): 495-499.

DOI: 10.1016/s1005-8850(08)60093-6

[5] Jacob Fage-Pedersen. Impurity–point defect complexes: Diffusion studies in Si and SiGe, and electrical studies in Ge, Ph.D. thesis, Institute of Physics and Astronomy University of Aarhus, Denmark, pp.1-10.

[6] Milind S. Kulkarni. A Review and Unifying Analysis of Defect Decoration and Surface Polishing by Chemical Etching in Silicon Processing. Ind. Eng. Chem. Res. 2003, 42, 2558-2588.

DOI: 10.1021/ie020716y

[7] Markus Forsberg. Chemical Mechanical Polishing of Silicon and Silicon Dioxide in Front End Processing. Uppsala dissertations, pp.12-36, (2004).

[8] Park, Boumyoung, Experimental Investigation of Material Removal Characteristics in Silicon Chemical Mechanical polishing. Information on: http: /escholarship. org/uc/item/40n7p86w. (2009).

[9] C.J. Tay. Surface roughness investigation of semi-conductor wafers. Optics and Laser Technology 36(2004)pp.535-539.

DOI: 10.1016/j.optlastec.2003.12.010

[10] Parshuram B. Zantyea, b, Ashok Kumara, b, A.K. Sikderb. Chemical mechanical planarization for microelectronics applications. Materials Science and Engineering R 45 (2004) 89–220.