Growth and Characterization of Radial pn Junction Gaas Nanowire by MOCVD

Yue Song; Xin Yan; Xia Zhang; Xiao Long Lv; Jun Shuai Li; Yong Qing Huang; Xiao Min Ren

doi:10.4028/www.scientific.net/AMR.457-458.165

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 457-458Growth and Characterization of Radial pn Junction...

Growth and Characterization of Radial pn Junction Gaas Nanowire by MOCVD

Abstract:

Radial pn-junction GaAs nanowires were fabricated and investigated in detail. These nanowires were grown on GaAs (111)B substrate by metal-organic chemical vapor deposition via Au-catalyzed vapor-liquid-solid mechanism. Two types of nanowire p-n junctions were fabricated by growing a n(p)-doped GaAs shell outside a p(n) GaAs core. P-type doping was provided by diethyl zinc, while silane was introduced for n-type doping. The morphology, crystal structure and doping characteristics were investigated by FESEM, TEM and EDS. The results showed that both the two structures were of good morphology and both dopants were successfully incorporated into the nanowires.

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Advanced Materials Research (Volumes 457-458)

Pages:

165-169

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.457-458.165

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Online since:

January 2012

Authors:

Yue Song, Xin Yan, Xia Zhang, Xiao Long Lv, Jun Shuai Li, Yong Qing Huang, Xiao Min Ren

Keywords:

GaAs Nanowire, High P-Type Doping Level, MOCVD, Radial Pn-Junction

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