Methods to Improve Properties of Gate Dielectrics in Metal-Oxide-Semiconductor

Abstract:

This essay aims to introduce development of gate dielectrics. In present-day society, Si-based MOS has met its physical limitation. Scientists are trying to find a better material to reduce the thickness and dimension of MOS devices. While substrate materials are required to have a higher mobility, gate dielectrics are expected to have high k, low Dit and low leakage current. I conclude dielectrics in both Si-based and Ge-based MOS devices and several measures to improve the properties of these gate dielectric materials. I also introduce studies on process in our group and some achievements we have got. Significantly, this essay points out the special interest in rare-earth oxides functioning as gate dielectrics in recent years and summarizes the advantages and problems should be resolved in future.

• Periodical: Advanced Materials Research (Volumes 463-464)
• Pages: 1341-1345
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.463-464.1341
• Online since: February 2012
• Authors: Chong Liu, Xiao Li Fan
• Keywords: Gate Dielectrics, Ge-Base MOS, Rare-Earth Oxides, Si-Base MOS

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