Weak-Light Readout Collection on the Quantum Effect Photoelectric Sensor

Abstract:

The weak-light characteristics of the GaAs/InGaAs quantum effect photoelectric sensor are presented. In order to explore its higher sensitive application because of higher quantum efficiency, a readout integrated circuit (ROIC) of the capacitor feedback transimpendance amplifier (CTIA) was designed to deal with voltage response of novel sensor. The readout circuit integration was designed to match 2×8 the photoelectric sensor array. A 633nm laser beam shot to the window of sensor with radiation intensity 2nW the readout response voltage was 225mV and 4.5E +07V /W responsivity at 120K and 44.8μs integration time when biased voltage up to -3V. Even under 0.5nw shooting,we still can see the high sensitivity.

• Periodical: Advanced Materials Research (Volume 465)
• Pages: 296-299
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.465.296
• Online since: February 2012
• Authors: S.H. Zhang, M.J. Wang, Fang Min Guo
• Keywords: Photoelectric Sensor, Quantum Effect Device, Readout Circuit, Weak-Light

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