Research on Preparation Method and Etching Technique of Large Scale Free P+ Diaphragm

Zhi Xia Zheng

doi:10.4028/www.scientific.net/AMR.468-471.2699

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 468-471Research on Preparation Method and Etching...

Research on Preparation Method and Etching Technique of Large Scale Free P+ Diaphragm

Abstract:

This paper introduces the preparation method of large scale free P+ diaphragm based on the boron doped and anisotropic wet etching techniques. It also explores the impact of the RF power configuration, pressure and SF6 flow rate on etching rate during ICP etching. It is indicated that silicon can be used as mask to solve the problems of large scale film break and the adhesion between mask and film which are caused by vacuumization during ICP etching. In order to avoid over etching, twice etching technique can be employed to control etching time and end point. Results of the experiment show that through etching, free P+ diaphragm can be fabricated into sensitive free beam which can be widely used in MEMS.

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Periodical:

Advanced Materials Research (Volumes 468-471)

Pages:

2699-2703

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.468-471.2699

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Online since:

February 2012

Authors:

Zhi Xia Zheng

Keywords:

Dry Etch, Free Film, Inductive Couple Plasmas, Mask, RF Power

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