Research of Low Temperature Si/Si Direct Bonding Wafers with Different Pretreatments

Abstract:

Pretreatment of silicon wafer surface is the key factor to successful Low Temperature Si/Si Direct Bonding(LTSDB). Different cleaning methods are taken as pretreatments and corresponding levels of hydrophilicity are achieved. The obtained result shows that the RCA1 cleaning can improve the hydrophilicity on a large scale, plasma can also increase it but the treating time must be controlled carefully. The experiment provide confidential message for the realization of LTSDB.

• Periodical: Advanced Materials Research (Volumes 468-471)
• Pages: 2828-2831
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.468-471.2828
• Online since: February 2012
• Authors: Fu Lin He, Lin Teng, Chuan Li
• Keywords: Contact Angle (CA), Hydrophilicity, Low Temperature Si/Si Direct Bonding, MEMS

References

[2] A.A.AYON, X.ZHANG, K.TURNER: The Fifteenth IEEE International Conference on Micro Electro Mechanical Systems, F, (2002)

[3] CHOI W K, YU D, LEE C：2008 Electronic Components and Technology Conference. 2008, pp.1294-9

[4] DOLL A, GOLDSCHMIDTBOEING F, WOIAS P: IEEE, Vol.13(2004),p.332.

[5] PASQUARIELLO D： Plasma Assisted Low Temperature Semiconductor Wafer Bonding, ACTA UNIVERSITATIS UPSALIENSIS, Uppsala,( 2001)

[6] TAKAGI H, RYUTAROMAEDA, ANDO Y: IEEE, (1997), p.124

[7] TONG Q-Y, CHA G, GAFITEANU R: Journal of Microelectromechanical System, Vol.3(1994), pp.29-34