InGaP/GaAs pnp Heterojunction Bipolar Transistor with δ-Doped Sheet between Base-Emitter Junction

Jung Hui Tsai; Shao Yen Chiu; Wen Shiung Lour; Chien Ming Li; Yi Zhen Wu; Ning Xing Su; Yin Shan Huang

doi:10.4028/www.scientific.net/AMR.47-50.383

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 47-50InGaP/GaAs pnp Heterojunction Bipolar Transistor...

InGaP/GaAs pnp Heterojunction Bipolar Transistor with δ-Doped Sheet between Base-Emitter Junction

Abstract:

In this article, a novel InGaP/GaAs pnp δ-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a δ-doped sheet between two spacer layers at the emitter-base junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and an offset voltage of 100 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.