Effect of Substrate Temperature and Incident Energy for Alloyzation of Co onto Cu(001) Substrate
The mixing situation of Co atoms implanting onto Cu(001) substrate is investigated with regard to incident energy and substrate temperature by molecular dynamics. The results indicate that higher substrate temperature and/or incident energy will result in higher intermixing between the incident atoms and the substrate atoms. Furthermore, the value of the first peak of the radial distribution function (RDF) becomes lower and wider for the Co-Cu system as the substrate temperature and/or incident energy are increased.
Alan K.T. Lau, J. Lu, Vijay K. Varadan, F.K. Chang, J.P. Tu and P.M. Lam
Z. H. Hong et al., "Effect of Substrate Temperature and Incident Energy for Alloyzation of Co onto Cu(001) Substrate", Advanced Materials Research, Vols. 47-50, pp. 375-378, 2008