Effect of N2 Partial Pressure on the Microstructure and Texture of MgO Films Deposited by Rf-Magnetron Sputtering

Abstract:

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Intensity of the (200) peak in the X-ray diffraction pattern of the MgO film increases as N2 is added to Ar gas during MgO deposition. The optimum flow rate ratio of N2 to Ar in order to obtain maximum intensity of the MgO (200) peak is 2 : 5. As introducing N2 gas, no residual nitrogen atoms are found in the MgO films, which are confirmed by AES and ESCA analysis. On the other hand, the TEM dark field image shows that the average grain size of MgO film increases with increasing the flow rate ratio of N2 to Ar. This is due to that the deposition rate of MgO film is decreased with increasing the flow rate ratio of N2 to Ar.

Info:

Periodical:

Advanced Materials Research (Volumes 47-50)

Edited by:

Alan K.T. Lau, J. Lu, Vijay K. Varadan, F.K. Chang, J.P. Tu and P.M. Lam

Pages:

588-591

DOI:

10.4028/www.scientific.net/AMR.47-50.588

Citation:

S.C. Chen et al., "Effect of N2 Partial Pressure on the Microstructure and Texture of MgO Films Deposited by Rf-Magnetron Sputtering", Advanced Materials Research, Vols. 47-50, pp. 588-591, 2008

Online since:

June 2008

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$35.00

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