The Mean Projected Range and Range Straggling of Yb Ions Implanted in Silicon Crystal

Xi Feng Qin; Hui Ning Wang; Zi Wu Ji; Feng Xiang Wang; Gang Fu

doi:10.4028/www.scientific.net/AMR.476-478.1249

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 476-478The Mean Projected Range and Range Straggling of...

The Mean Projected Range and Range Straggling of Yb Ions Implanted in Silicon Crystal

Abstract:

The mean projected ranges and range straggling for energetic 200 – 500 keV Yb ions implanted in single crystal silicon (c-Si) at room temperature were measured by means of Rutherford backscattering followed by spectrum analysis. The measured results are compared with Monte Carlo code (SRIM2010) predictions. Our results show that the measured values of the mean projected range R_p are good agreement with the SRIM calculated values; but the difference of the range straggling ΔR_p between the experiment data and the calculated results is much higher than that of R_p.

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Advanced Materials Research (Volumes 476-478)

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1249-1253

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.476-478.1249

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Online since:

February 2012

Authors:

Xi Feng Qin, Hui Ning Wang, Zi Wu Ji, Feng Xiang Wang, Gang Fu

Keywords:

Projected Range, Range Straggling, Rutherford Backscattering Technique, Yb Ion Implantation

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