Influence of La2O3-Doping on Dielectric Properties of Ba(Ti, Sn)O3 Ceramics

Yuan Liang Li; Xue Gang Ma; Ran Ran Wang; Zhi Min Cui; Ying Chen; Chen Chen; Qing Jun Zhang

doi:10.4028/www.scientific.net/AMR.476-478.928

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 476-478Influence of La2O3-Doping on Dielectric Properties...

Influence of La₂O₃-Doping on Dielectric Properties of Ba(Ti, Sn)O₃ Ceramics

Abstract:

Ba(Ti0.95Sn0.05)O3 ceramics were prepared using BaCO3, SnO2 and TiO2 et al as crude materials, La2O3 as dopant, and their dielectric properties are investigated. The morphology analysis of sintered samples was conducted by SEM. It is found that for 0.1 wt% La2O3 doped BTS5 ceramics sintered at 1290oC has the highest dielectric constant. It can also be seen that the samples sintered at 1260oC have higher dielectric loss, which can result from the existence of the pore. Meanwhile, in the terms of dielectric loss, 0.1 wt% La2O3 doped BTS5 ceramics has lower value and the dielectric loss is more stable with temperature varying.